National Semiconductor Portland, ME
Description
Completed as part of an advanced microelectronics fabrication facility, Hodess was responsible for furnishing and installing the structural steel system supporting a Class 1 cleanroom environment. The scope included integration of a flush light, gel seal ceiling system (Gordon), approximately 50,000 sf of aluminum, non-particulating, non-progressive wall systems (Plascore), and a raised aluminum access floor (Tate).
The project also encompassed the design and installation of the floor’s structural support system, along with all drywall work, including fire-rated walls, stairwell shafts, and building enclosures. The facility was constructed to achieve a Class 1 @ 0.12 micron standard, supporting an eight-inch microelectronic wafer fabrication process, with Hodess delivering the full cleanroom scope under the primary contractor.
Industry
Microelectronics
Project Delivery
Design Build
ISO Class
ISO 3
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